Influence of Silicon and Nano-Silicon on Germination, Growth and Yield of Faba Bean (Vicia faba L.) Under Salt Stress Conditions

Aims: The present study was conducted to evaluate the effects of Silicon (Si) and Nano-Silicon (NSi) for ameliorating negative effects of salinity on germination, growth and yield of faba bean (Vicia faba L.).

Study Design: Factorial completely randomized design Pot experiments used with Si and NSi applied at 4 concentrations each (0, 1, 2 and 3 mM) and NaCl (0, 50, 100 and 200 mM) were studied.

Place and Duration of Study: Experiments were carried out in the greenhouse of Faculty of Science, Princess Nora Bint Abdulrahman University, Kingdom of Saudi Arabia during winter season of 2010/2011

Methodology: Si and NSi applied at 4 concentrations each (0, 1, 2 and 3 mM) and NaCl (0, 50, 100 and 200 mM) were studied. Germination characteristics such as germination percentage (GP), germination rate (GR) and mean germination time (MGT) were measured. Vegetative growth including plant height, leaf area and fresh and dry weights was also studied. Yield and its components were determined. Nutrient elements (N, P, K, Ca and Na) in the seeds were also determined.

Results: Results showed that salinity had deleterious effects on seed germination, plant growth and yield. N, P, Ca and K in seeds decreased at salinity stress but Na increased. Application of Si and NSiO2 significantly enhanced the characteristics of seed germination. Among the treatments, 2mM of Si or NSiO2 improved GP, GR and MGT. The harmful effect of salt stress on vegetative growth and relative water content (RWC) was also alleviated by the addition of Si and NSi which caused significant increases in plant height, fresh and dry weights, RWC and total yield. Seed quality, represented by nutrient elements, was also improved by application of Si and NSi.

Conclusion: It is concluded that the application of Si was beneficial in improving the salt tolerance of Vicia faba plants.